Speaker
Ms
Costanza Pennaforti
Description
This work investigates the ferroelectric properties of γ − In₂Se₃, a material that uniquely retains its spontaneous polarization at the nano-scale, making it resistant to depolarizing fields. With a direct band gap of 1.8 eV and the ability to switch between insulating and semiconducting phases at room temperature, γ − In₂Se₃ holds promise for next-gen memory devices, where its stable ferroelectricity could revolutionize data storage and processing.
| Submitter's Email Address | [email protected] |
|---|---|
| Recording Permission | YES |
| Virtual Audience Permission | YES |
| Photography Permission | YES |
Primary author
Ms
Costanza Pennaforti
External references
- 24090198
- e30ba2af-1c3d-4ddb-8a33-a7fb38399d2f
